HomeNewsIndia NewsGaN-on-Silicon Technology for Power Conversion Applications

GaN-on-Silicon Technology for Power Conversion Applications

STMicroelectronics and Leti announced their cooperation to industrialize GaN (Gallium Nitride)-on-Silicon technologies for power switching devices. This power GaN-on-Si technology will enable ST to address high-efficiency, high-power applications, including automotive on-board chargers for hybrid and electric vehicles, wireless charging, and servers.

The collaboration focuses on developing and qualifying advanced power GaN-on-Silicon diode and transistor architectures on 200mm wafers, a market that the research firm IHS Markit estimates to grow at a CAGR of more than 20 percent from 2019 to 2024[1]. Together, in the framework of IRT Nanoelec, ST and Leti are developing the process technology on Leti’s 200mm R&D line and expect to have validated engineering samples in 2019. In parallel, ST will set up a fully qualified manufacturing line, including GaN/Si hetero-epitaxy, for initial production running in ST’s front-end wafer fab in Tours, France, by 2020.

In addition, given the attractiveness of GaN-on-Si technology for power applications, Leti and ST are assessing advanced techniques to improve device packaging for the assembly of high power-density power modules.

“Recognizing the incredible value of wide-bandgap semiconductors, ST’s contributions in Power GaN-on-Si manufacturing and packaging technologies with CEA-Leti move to arm us with the industry’s most complete portfolio of GaN and SiC products and capabilities, on top of our proven competence to manufacture high-quality, reliable products in volume,” said Marco Monti, President Automotive and Discrete Group, STMicroelectronics.

“Leveraging Leti’s 200mm generic platform, Leti’s team is fully committed to supporting ST’s strategic GaN-on-Si power-electronics roadmap and is ready to transfer the technology onto ST’s dedicated GaN-on-Si manufacturing line in Tours. This co-development, involving teams from both sides, leverages the IRT Nanoelec framework program to broaden the required expertise and innovate from the start at device and system levels,” said Leti CEO Emmanuel Sabonnadiere.

ELE Times Research Desk
ELE Times Research Deskhttps://www.eletimes.ai
ELE Times provides a comprehensive global coverage of Electronics, Technology and the Market. In addition to providing in depth articles, ELE Times attracts the industry’s largest, qualified and highly engaged audiences, who appreciate our timely, relevant content and popular formats. ELE Times helps you build awareness, drive traffic, communicate your offerings to right audience, generate leads and sell your products better.

Related News

Must Read

How an Electric Vehicle Works: From Battery Packs to Wheels

The working principle of an electric vehicle (EV) relies...

STMicroelectronics Introduces Sustainable 6-Axis Motion Sensors for Smart Devices, Drones

STMicroelectronics has highlighted its latest miniature 6-axis motion sensors...

Nuvoton Introduces NSP2340BA24E Smart Buzzer, Redefining the Buzzer Sound Experience

Nuvoton Technology introduces the NSP2340BA24E Smart Buzzer, integrating voice...

HARTING Joins NVIDIA MGX Ecosystem to Power Next-Generation AI Infrastructure

HARTING Technology Group, a leading global provider of industrial...

onsemi Unveils Advanced Semiconductor Packaging to Improve EV Inverter Efficiency

​Semiconductor manufacturer onsemi, specialised in silicon carbide (SiC) power...