Infineon Technologies AG is expanding its technology partnership with NVIDIA based on 800 Volt direct current (VDC) power architectures for AI data centres. The latest from the companies is an announcement timed to NVIDIA’s GTC Berlin developer conference based on the high-voltage intermediate bus converter (IBC), which is one of the most critical and challenging conversion stages in the power chain of AI data centres, with Infineon’s gallium nitride (GaN) emerging as a preferred technology. This builds on the companies’ prior collaboration announced in May 2025, and elaborated on in October 2025, which included power-path protection and hot-swap functionality for 800 VDC server architectures.
“AI is fundamentally reshaping the demands we place on power infrastructure, and semiconductors are at the heart of solving that challenge,” said Jochen Hanebeck, CEO, Infineon Technologies AG. “Our collaboration with NVIDIA on 800 Volt power architectures shows what is possible when deep semiconductor expertise meets the pace of innovation required by AI. Gallium nitride-based system solutions are a key enabler of this next generation of data centres, and Infineon is proud to help power the AI era from grid to core.”
The growing power demands of AI workloads have driven data centre designers to adopt intermediate-bus architectures. An intermediate bus converter (IBC) steps down the main DC bus voltage and supplies a lower voltage to subsequent power-conversion stages, which generate the voltage levels required by AI processors. This multi-stage approach helps manage power-distribution losses and improve overall efficiency while meeting strict constraints on board space, thermal management and system reliability. As AI computing requirements grow, 800 VDC is emerging as an additional power-distribution approach designed to support higher power densities in AI data centres.
Gallium nitride is well suited to meet these requirements. Compared to silicon, GaN allows power devices to switch significantly faster with lower losses, which enables higher switching frequencies of up to 1 MHz at the IBC stage. This in turn allows the size of magnetic components and passives to shrink considerably, directly translating into higher power density and lower board heights, a critical advantage as rack space becomes an increasingly scarce resource in AI data centres. At the same time, GaN’s low conduction and switching losses support best-in-class conversion efficiency, helping to limit heat generation even as power levels per rack continue to climb toward the megawatt range. These characteristics make GaN the preferred semiconductor technology today capable of meeting the combined demands of power density, efficiency, and fast transient response at the IBC stage, a position Infineon has built on the back of many years of leadership in GaN development and manufacturing. In combination with PSoC control C3 and EiceDRIVER product families, full system solutions for IBCs are provided by Infineon.
Infineon’s GaN portfolio supports the full range of conversion ratios required at the HV IBC stage, including 800 V to 50 V, 800 V to 12 V, and 800 V to 6 V, giving data centre operators the flexibility to optimize rack architectures without compromising on power density or efficiency. At this combination of high switching frequency, power density and efficiency, the GaN power switches are used to their full benefits. Infineon’s technology leadership in power semiconductors relies on extensive in-house manufacturing capabilities as well as application and system expertise built up over many years. The company’s portfolio spans IBC solutions across silicon, gallium nitride and silicon carbide, supporting customers along the entire range of their design requirements.
Infineon and NVIDIA collaborate along the entire data centre power chain. In addition to IBCs, this also includes power path protection solutions, as announced in October 2025, targeting safety and service aspects such as the hot-swap controller functionality and enabling future server boards to operate in 800 VDC power architectures.
This advanced collaboration underscores Infineon’s position as a grid-to-core power semiconductor partner for AI infrastructure, supplying solutions across the full power delivery chain, from grid-facing power supply units to the point of load at the processor.
