Designed for extreme environments and conditions, radiation-hardened MOSFETs are available from 100 Krad to 300 Krad Total Ionizing Dose
The JANS qualification represents the highest level of screening and acceptance requirements, ensuring the superior performance, quality and reliability of discrete semiconductors for aerospace, defense and spaceflight applications. Microchip Technology announced the completion of its family of radiation-hardened power MOSFETs to the MIL-PRF-19500/746 slash-sheet specification and the achievement of JANSF qualification for its JANSF2N8587U3, 100V N-channel MOSFET to 300 Krad (Si) Total Ionizing Dose (TID).
Microchip’s JANS series of rad-hard power devices are available in voltage ranges from 100–250V to 100 Krad (Si) TID, with the family expanding to higher Radiation Hardness Assurance levels, starting with the JANSF2N7587U3 at 300 Krad (Si) TID. The JANS RH MOSFET die is available in multiple package options including a plastic package using the MIL-qualified JANSR die, providing a cost-effective power device for New Space and Low Earth Orbit (LEO) applications. The ceramic package is hermetically sealed and developed for total dose and Single-Event-Environments.
The devices are designed to meet the MIL-PRF19500/746 standard with enhanced performance, making them excellent options for applications that demand high-reliability components capable of withstanding the harsh environments of space and extending the reliability of power circuitry.
“Meeting the stringent specifications required for rad-hard MOSFETs is extremely challenging, and Microchip is pleased to achieve this development milestone by leveraging its proprietary rad-hard by design process and technology,” said Leon Gross, corporate vice president of Microchip’s discrete products group. “Our advanced technology provides our aerospace and defense customers with highly reliable and cost-effective solutions that meet the growing demand of the market and their applications.”
The JANSF and JANSR RH power MOSFETs serve as the primary switching elements in power conversion circuits, including point-of-load converters, DC-DC converters, motor drives and controls, and general-purpose switching. With low RDS(ON) and a low total gate charge, these power MOSFETs offer improved energy efficiency, reduced heat generation and enhanced switching performance when compared to similar devices on the market.
