HomeElectronicsUpgrading Factory Power Safety with Silicon Carbide Semiconductors from Infineon and Siemens

Upgrading Factory Power Safety with Silicon Carbide Semiconductors from Infineon and Siemens

Semiconductor circuit breakers are fast-acting, semiconductor-based electronic devices that protect electrical circuits and components from damage caused by short circuits or overloads. Infineon’s silicon carbide power modules enhance the efficiency, power density, and reliability of the Siemens circuit breaker

Infineon Technologies AG and Siemens AG are partnering to advance electrical protection and ensure reliable operations in data centers, production facilities, and battery storage systems. As part of the collaboration, Infineon will supply silicon carbide (SiC) power modules to Siemens for use in its SENTRON 3QD2 semiconductor circuit breakers. This will enhance the efficiency, power density, and reliability of Siemens’ protection solution.

“AI data centers and factories are becoming increasingly electrified and complex. This increases vulnerability to electrical failures and drives the demand for more sustainable, efficient, and reliable power distribution systems,” said Andreas Weisl, Executive Vice President & Chief Sales Officer of Industrial and Infrastructure at Infineon. “By combining our advanced silicon carbide technology with Siemens’ expertise in power distribution, we are addressing this demand to ensure fast, safe, and reliable operations in power-critical environments.”

A semiconductor circuit breaker, also known as a solid-state circuit breaker, is an electronic device that protects electrical circuits from damage by excessive current flow, such as short circuits or overloads. Unlike traditional electromechanical circuit breakers, which rely on mechanical parts to interrupt the flow of current and typically operate on the millisecond scale, the Siemens SENTRON 3QD2 uses semiconductor components and smart protection algorithms to perform this function. This enables ultra-fast interruption in the microsecond range, up to 1,000 times faster than conventional systems. This capability is essential for direct current (DC) grids and offers a significant increase in protection and system availability, which is crucial in applications like industrial manufacturing and AI data centers, where even a slight delay can cause costly downtime, data loss, or expensive hardware damage in the event of electrical failures.

“Our new direct current portfolio offers innovative solutions that not only improve energy efficiency but also enable the development of resilient, future-proof infrastructure,” said Markus Grabmeier, CEO of Electrical Products at Siemens Smart Infrastructure. “Direct current applications can decrease energy consumption and substantially cut material usage. By integrating batteries, peak power can also be significantly reduced. With this approach, we are making a decisive contribution to the decarbonization of our industries, while reinforcing our commitment to developing technologies that deliver tangible value to our customers and society.”

This technology directly addresses the increasing demands of power-critical applications, where speed, precision, and reliability are essential. Integrating the 1200 V CoolSiC MOSFET module into advanced solid-state circuit protection concepts creates a more resilient, efficient, and future-ready power infrastructure. This approach supports the growing adoption of DC grids and highly electrified environments, helping industrial and infrastructure operators meet rising performance and reliability requirements.

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