Alliance Memory extended its offering of 512Mb high-speed CMOS SDRAMs with new monolithic 64M x 8 (AS4C64M8SC-7TIN) and 32M x 16 (AS4C32M16SC-7TIN) devices in the 54-pin 400-mil plastic package, and a 16M x 32 (AS4C16M32SC-7TIN) device in the 86-pin TSOP II package. The new SDRAMs are among the products Alliance Memory will feature next week at electronica 2018 in Stand B5 526.
Featuring a LVTTL interface, the SDRAMs operate from a single +3.3-V (± 0.3 V) power supply, feature a power down mode to lower power consumption, and offer a data mask for read/write control. The devices feature fast clock rates to 133 MHz and are available in an industrial temperature range of -40 °C to +85 °C.
Fully synchronous with the positive clock edge, the AS4C64M8SC-7TIN, AS4C32M16SC-7TIN, and AS4C16M32SC-7TIN deliver faster performance than DRAMs in general-purpose computing, medical, industrial, point-of-sale, automotive, and telecom applications requiring high memory bandwidth. With minimal die shrinks, they can provide reliable drop-in, pin-for-pin-compatible replacements for numerous similar solutions in these applications, eliminating the need for costly redesigns and part requalification.
The SDRAMs support sequential and interleave burst types with read or write burst lengths of 1, 2, 4, 8, or full page. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, while a programmable mode register allows the system to choose the most suitable modes to maximize performance. The devices are lead (Pb)- and halogen-free.
Samples and production quantities of the new SDRAMs are available now, with lead times of eight weeks for large orders.
