Infineon Technologies has launched its OptiMOS 7 40 V power MOSFETs for use in AI servers, data centres and telecom infrastructure. These devices are designed for high-frequency DC-DC power conversion, helping improve energy efficiency and deliver more power in systems with limited space. They can be used in power conversion stages of emerging 800 V DC and 48 V power architectures. In suitable circuit designs, the MOSFETs can also support switching frequencies above 1 MHz, making them suitable for advanced power supply systems.
“With the OptiMOS 7 40 V, we give designers a MOSFET that cuts conduction and switching losses at the same time, so they can raise power density in the very limited space of an AI server,” said Richard Kuncic, Business Line Head Power Switches at Infineon. “It fits the secondary side of emerging 800 V DC architectures as well as today’s 48 V designs, which lets our customers move to the next architecture at their own pace.”
The OptiMOS 7 40 V MOSFETs are designed to reduce both conduction and switching losses, helping improve overall power efficiency. Compared with the previous-generation OptiMOS 6 device (IQE013N04LM6CGSC), the new IQE010N04LM7CGSC offers up to 33% lower maximum on-state resistance (RDS (on)) at a gate-source voltage of 4.5 V. It also reduces output charge (Qoss) and gate charge (Qg) by up to 35% each. The devices are designed to operate with a 5 V gate drive, making them compatible with gate-drive systems commonly used in GaN-based designs. They can also withstand junction temperatures of up to 175°C.
Source-down and dual-side cooling package options provide flexibility for compact layouts and thermal management. The IQE010N04LM7CG and IQE010N04LM7CGSC are offered in PQFN 3.3 mm × 3.3 mm source-down centre gate packages, with overmolded and dual-side cooling options. Both feature a maximum RDS(on) of 1.0 mΩ at a gate-source voltage of 10 V. The portfolio also includes the ISCH65N04LM7SC, ISCH69N04LM7SC and ISC011N04LM7SC in PQFN 5 mm × 6 mm drain-down packages with dual-side cooling, featuring maximum RDS(on) values of 0.65 mΩ, 0.69 mΩ and 1.1 mΩ, respectively, at a gate-source voltage of 10 V.
