Mouser Electronics, Inc., the industry’s leading New Product Introduction (NPI) distributor with the widest selection of semiconductors and electronic components, is now stocking the QPD0011 high-electron-mobility transistor (HEMT) from Qorvo. The gallium nitride-on-silicon carbide (GaN-on-SiC) transistor delivers power and performance for cellular base station and RF applications in 5G massive MIMO, LTE, and WCDMA systems.
The Qorvo QPD0011, available from Mouser Electronics, is an asymmetric, dual-path amplifier in a small, 7.0 mm × 6.5 mm DFN package. Utilizing variable power inputs from 30 W to 60 W and drain voltages of +48 V, the QPD0011 operates between 3.3 GHz and 3.6 GHz and features up to 13.3 dB of gain, for ultra-efficient signal, peak, and power performance (up to 90 W) in Doherty design environments.
For development, Mouser also stocks the QPD0011EVB1 Evaluation Board. The QPD0011EVB1 platform includes an example application circuit, allowing rapid prototyping when incorporated into existing designs. Applications for the QPD0011 include macrocell and microcell base stations, active antennas, and asymmetric Doherty designs.
Mouser / Qorvo QPD0011 GaN-on-SiC HEMT
As a global authorized distributor, Mouser offers the world’s widest selection of the newest semiconductors and electronic components — in stock and ready to ship. Mouser’s customers can expect 100% certified, genuine products that are fully traceable from each of its manufacturer partners. To help speed customers’ designs, Mouser’s website hosts an extensive library of technical resources, including a Technical Resource Center, along with product data sheets, supplier-specific reference designs, application notes, technical design information, engineering tools, and other helpful information.
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