HomeElectronicsRapid Access to Future-Proofed SuperGaN Power FET Portfolio a Reality

Rapid Access to Future-Proofed SuperGaN Power FET Portfolio a Reality

Transphorm’s high-performance, high-reliability SuperGaN power semiconductors are making significant strides in the power electronics market by leveraging one of the largest power GaN IP portfolios, comprising over 1,000 patents. These advancements are encapsulated in a normally-off d-mode GaN platform that ensures top-notch robustness and reliability. Products utilizing SuperGaN FETs benefit from higher power density, improved efficiency, and reduced total power system costs compared to alternative solutions.

Fundamental Physics and Technological Advantages

The superior performance of SuperGaN devices is rooted in their fundamental physics. The platform’s inherent advantages include:

  • Industry-Leading Efficiency: Achieving efficiencies greater than 99%, SuperGaN devices set a benchmark in the industry.
  • Higher Power Density: Up to 50% higher power density allows for more compact and efficient power systems.
  • Lower System Cost: With up to 20% reduction in system costs, SuperGaN provides a cost-effective solution.
  • Proven Robustness and Reliability: Ensuring long-term performance and dependability.
  • Compatibility: Drop-in and drive compatibility with all other high voltage power technologies.
  • Wide Power Application Range: Supporting applications from 40W to 7.5kW, with future expansions to higher power ratings.

Innovations and Industry Firsts

Transphorm’s GaN technology has led to several ground-breaking innovations:

  • 1200 V GaN-on-Sapphire Device: Expected to be commercially available by mid-2024, this device marks a significant milestone in GaN technology.
  • Short-Circuit Withstand Times: Achieving withstand times of five microseconds, demonstrating superior robustness.
  • GaN Four Quadrant Switch: Featuring true voltage and current bidirectionality control, enhancing flexibility and performance in power systems.

Strategic Partnerships and Market Impact

Element14’s Product Category Director for Passives & Semiconductors, Jose Lok, emphasized the importance of partnering with Transphorm. This collaboration supports the delivery of high-quality products and offers customers a broader choice of manufacturers and GaN device packages to meet diverse design needs.

Vipin Bothra, VP of Sales for North America and Europe at Transphorm, highlighted the transformative impact of the SuperGaN platform on the power electronics market. By driving major design and performance advantages, Transphorm’s GaN devices are being adopted globally across consumer, industrial, and automotive markets. Partnering with respected global distributors like element14 is crucial for meeting customer needs and revolutionizing power systems across various applications, from adapters and PCs to renewable energy systems and electric vehicles.

Conclusion

Transphorm’s SuperGaN power semiconductors represent a versatile and future-proofed solution for the power electronics industry. Their high efficiency, robustness, and compatibility with a wide range of applications make them a compelling choice for designers and manufacturers aiming to enhance performance and reduce costs in their power systems.

Rashi Bajpai
Rashi Bajpaihttps://www.eletimes.ai/
Rashi Bajpai is a Sub-Editor associated with ELE Times. She is an engineer with a specialization in Computer Science and Application. She focuses deeply on the new facets of artificial intelligence and other emerging technologies. Her passion for science, writing, and research brings fresh insights into her articles and updates on technology and innovation.

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