South Korea’s tech behemoth Samsung Electronics Co. introduced next-generation flash memory solutions to better accommodate growing storage demands at Flash Memory Summit 2016 held in the Santa Clara Convention Center on Wednesday.
The company showcased its 4th generation, 64-layer Vertical NAND (V NAND) flash memory and a line-up of high-performance, high-capacity solid state drives (SSDs) at the world’s biggest flash memory conference.
“With our 4th generation V-NAND technology, we can provide leading-edge differentiated values in high capacity, high performance and compact product dimensions,” said Jun Young-hyun, memory business president at the company.
Samsung unveiled 4th generation V-NAND that stacks 30 percent more layers of cell-arrays than its predecessor. The new V-NAND can increase its single-die density to an industry-leading 512Gb and its IO speed to 800Mbps. The company will release the world’s first 4th generation, 64-layer V-NAND flash memory in the fourth quarter this year.
Samsung also introduced the world largest capacity drive 32TB Serial Attached SCSI (SAS) SSD for enterprise storage systems that can reduce system space requirements up to 40 times. It is expected to be released next year.
The company also unveiled 1TB ball grid array (BGA) SSD that weighs only about one gram, making it ideal for ultra-compact laptops and tablets.
A high performance, ultra-low latency SSD solution, Z-SSD was also introduced. The Z-SSD will be used in systems that deal with extremely intensive real-time analysis, the company said.
