Infineon Technologies and SolarEdge Technologies, have expanded their existing collaboration to include Solid-State Circuit Breaker (SSCB) technology for high-voltage DC distribution in AI and hyperscale data centres. The collaboration addresses a key challenge in adopting 800 VDC architectures: achieving selective protection while maintaining high efficiency requires extremely fast fault isolation.
Expanding the partnership into solid-state protection addresses an important gap in the distribution layer between the Solid State Transformer (SST) and the compute rack, further advancing the end-to-end grid-to-rack concept. SolarEdge is leading the design of the Solid-State Circuit Breaker (SSCB) solution, while Infineon contributes its silicon carbide (SiC) JFET technology as a core component of the protection switch.
Rapidly increasing AI compute density is pushing the data-centre industry toward higher-voltage DC distribution architectures. In this environment, solid-state circuit breakers (SSCBs) address the need for fast and selective fault protection. Unlike AC systems, DC systems do not have a natural current zero, making fault interruption more challenging and potentially resulting in arcing when conventional mechanical breakers are used.
SSCBs overcome this limitation by using power semiconductors to interrupt fault currents in the microsecond regime, without mechanical contacts and the associated arcing. Infineon’s CoolSiC JFET technology combines low conduction losses, fast turn off capability and high robustness, making it suitable for solid-state protection applications. These characteristics can help protect high-value compute hardware from fault-related damage while supporting compact and power-dense DC distribution architectures.
The collaboration builds directly on SolarEdge’s SST platform with Infineon SiC components, first announced in November 2025. The SST is designed to enable direct medium-voltage (13.8-34.5 kV) to 800-1500 VDC conversion at over 99 percent efficiency, collapsing multiple conversion stages into a single solution while reducing physical footprint.
“High-density AI infrastructure at 800 VDC demands uncompromising efficiency and protection”, said Shuki Nir, Chief Executive Officer of SolarEdge. “Solid-state protection will enable operators to achieve both, delivering ultra-fast and dependable fault isolation without sacrificing conversion performance. Infineon’s silicon carbide technology is what makes it practical at scale.”
“Today’s data infrastructures have become more vulnerable to electrical faults, thereby driving the demand for smarter, faster and more robust power distribution systems,” said Andreas Weisl, Executive Vice President and Chief Sales Officer of Industrial & Infrastructure at Infineon. “By combining our advanced silicon carbide JFET technology with SolarEdge’s expertise in final power distribution, we are addressing these demands to ensure fast, safe and reliable operations in AI data centers.”
Building on more than 15 years of leadership in DC-coupled power electronics, SolarEdge is developing an 800 VDC powertrain for AI factories, a DC-native chain that carries power from the medium-voltage grid connection through conversion, distribution and protection to the compute rack. Infineon’s broad portfolio of silicon, silicon carbide and gallium nitride solutions provides that foundation, supporting the decarbonisation of AI infrastructure through lower losses, reduced environmental impact, and improved total cost of ownership.
