Fuji Electric Co., Ltd. has announced the release of its Super-Junction MOSFET, Super J MOS S2/S2FD Series, as a new power semiconductor product. One structure of MOSFET (field-effect transistor). The resistance value per unit surface area can be reduced relative to conventional planar structure.
Power semiconductors, incorporated into all electrical products from industrial equipment such as UPSs and power conditioners, to household appliances, are a key device in the realization of energy conservation and a stable power supply.
In recent years, Demand for energy saving has been increasing because of the expansion of the global energy demand. The size of the market for super junction MOSFETs contributing to reducing the power consumption of equipment in which they are mounted is at roughly 120 billion yen in 2016, and is expected to grow at an annual rate of 14%.
Now, we have reduced power resistance compared to existing products, and released this new “Super J MOS S2/S2FD Series” which contributes further to energy savings.
Reduced resistance during conduction, contributing to energy saving
The S2 series has 25% reduced resistance during conduction, relative to the existing S1 series, in comparison with the same chip area. This will contribute to energy saving and power cost reductions for equipment in which the products are mounted.
Reduced switching loss with faster built-in diode
The S2FD series has roughly 50% reduced time taken for the built-in diode to switch off (recovery time) compared to the S2 series. By applying this product in inverter circuits etc. that use internal diodes, switching losses are reduced, and the large voltages instantaneously generated when switching (surge voltages) are also suppressed. This will contribute to energy saving and improve the reliability of equipment in which the products are mounted.
Applications: UPSs, power conditioners, quick EV chargers, servers and communications base stations, LED lighting etc.
Contact: Fuji Electric Co., Ltd., Tel: +81-3-5435-7156
