The MRAM Global Innovation Forum is the industry’s premier platform for Magnetoresistive Random Access Memory (MRAM) technology, bringing together leading magnetics experts and researchers from industry and academia to share the latest MRAM advancements. Now in its 13th year, the annual one-day conference will be held the day after the IEEE International Electron Devices Meeting (IEDM) on December 11, 2025 from 8:45am to 6pm at the Hilton San Francisco Union Square Hotel’s Imperial Ballroom A/B.
The 2025 MRAM technical program includes 12 invited presentations from leading global MRAM experts, as well as an evening panel. The programs will throw light on technology development, product development, tooling and other exploratory topics.
MRAM technology, a type of non-volatile memory is known for its high speed, endurance, scalability, low power consumption and radiation hardness. Data in MRAM devices is stored by magnetic storage elements instead of an electric charge, in contrast to conventional memory technologies. MRAM technology is increasingly used in embedded memory applications for automotive microcontrollers, edge AI devices, data centers, sensors, aerospace, and in wearable devices.
“The STT-MRAM market is growing rapidly now, especially with use of embedded STT-MRAM in next-generation automotive microcontroller units,” said Kevin Garello, MRAM Forum co-chair (since 2021) and senior researcher engineer at SPINTEC. “I expect edge AI applications to be the next big market for STT-MRAM.”
“I am pleased to see that over the years, the MRAM Forum series has grown into a landmark event within the MRAM industrial ecosystem,” said Bernard Dieny, former MRAM Forum co-chair (2017–2023), and director of research at SPINTEC. “We are witnessing a steady increase in the adoption of this technology across the microelectronics industry, and the initial concerns associated with this new technology are steadily fading away.”
