HomeNewsIndia NewsRenesas Introduces Rugged and High Performance 100V Half-Bridge MOSFET Drivers

    Renesas Introduces Rugged and High Performance 100V Half-Bridge MOSFET Drivers

    Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, introduced the HIP2211 and HIP2210, a new pair of 100V half-bridge MOSFET drivers. The HIP2211 is a next-generation pin-compatible upgrade to Renesas’ popular ISL2111 bridge driver, while the new HIP2210 offers a tri-level PWM input to simplify power supply and motor drive design. The HIP2211 and HIP2210 are ideal for 48V telecom power supplies, Class-D audio amplifiers, solar inverters, and UPS inverters. They are also rugged enough to power the demanding 48V motor drives found in Li-ion battery-powered household and outdoor products, water pumps, and cooling fans.

    The HIP221x drivers are designed to work reliably under difficult operating conditions, with the high-speed, high-voltage HS pin tolerating up to -10V continuously and slewing as quickly as 50V/ns. Comprehensive under-voltage protection works in tandem with the HIP2210’s programmable anti-shoot-through protection to ensure the driven MOSFETs are not damaged due to power supply or other external fault conditions. Renesas’ HIP221x drivers feature strong 3A source, 4A sink drivers with very fast 15ns typical propagation delay and 2ns typical delay matching, making them the optimal solution for high-frequency switching applications. Both the HIP2210 and HIP2211 are designed to complement Renesas microcontrollers in advanced DC/DC and brushless motor drive systems.

    “The innovative HIP221x devices continue our 25-year heritage of developing industry leading Harris Intelligent Power (HIP) half-bridge drivers, said Philip Chesley, Vice President, Industrial and Communications Business Division at Renesas. “Robust noise tolerance, ultra-fast propagation delays, and high system efficiency are some of the key features our customers have come to rely on from our entire range of HIP half-bridge MOSFET drivers.”

    Key Features of HIP2211 and HIP2210

    • 115VDC bootstrap supply maximum voltage (120V HS absolute maximum) supports 100V on the half-bridge
    • Wide VDD voltage operating range of 6V to 18V (20V absolute maximum)
    • HS pin tolerates up to -10V and 50V/ns slew rates
    • Integrated 0.5Ω typical bootstrap diode eliminates external discrete diodes
    • VDD and boot UVLO prevent low gate voltage drive to the NFETs
    • Adjustable dead time delay via RDT pin (HIP2210 only) prevents shoot-through conditions, adjustable from 35ns to 350ns with a single resistor

    Pricing and Availability

    The HIP2211 and HIP2210 are available now from Renesas’ worldwide distributors, both priced at $1.30 USD in 1,000-unit quantities. The HIP2211 is supplied in an 8-lead SOIC and a 10-lead 4mm x 4mm TDFN package. For more information and evaluation board, please visit: www.renesas.com/products/hip2211.

    The HIP2210 is supplied in a 10-lead 4mm x 4mm TDFN package. For more information and evaluation board, please visit: www.renesas.com/products/hip2210.

    ELE Times Bureau
    ELE Times Bureauhttps://www.eletimes.ai/
    ELE Times provides a comprehensive global coverage of Electronics, Technology and the Market. In addition to providing in depth articles, ELE Times attracts the industry’s largest, qualified and highly engaged audiences, who appreciate our timely, relevant content and popular formats. ELE Times helps you build awareness, drive traffic, communicate your offerings to right audience, generate leads and sell your products better.

    Related News

    Must Read

    What is Fashion Tech? Providing New Product Value and Customer Experiences with Technology

    Courtesy: Murata Electronics What is fashion tech? - diverse technologies...

    Emergency Screaming Detection: How AI Recognizes Human Screams and Saves Lives

    Courtesy: Renesas Detecting human screams for help is important in...

    India’s Electronics Push: Ambition Is Clear. Execution Will Decide the Outcome

    India’s electronics story has entered a decisive phase. The...

    India on the Road to Semicon Self-Reliance with Three More Plants

    India to welcome three more semiconductor plants after PM...

    Upcoming years to Bring Boom for Semiconductors and Electronics

    Union Minister for Electronics and Information Technology Ashwini Vaishnaw...

    R&S Propels 6G Readiness With FR1–FR3 Carrier Demonstration

    Rohde & Schwarz and Qualcomm Technologies, Inc. have reached...

    ROHM and Suchi Semicon Establish a Strategic Semicon Manufacturing Partnership in India

    ROHM and Suchi Semicon have announced the establishment of...

    Keysight to Demonstrate NR-NTN devices Mobility Testing at MWC 2026 in Collaboration with Samsung

    Keysight Technologies, Inc. will demonstrate lab-based validation of new...

    ROHM Strengthens Supply Capability for GaN Power Devices

    Combining TSMC’s Process Technology to Build an End-to-End, In-Group...