Mitsubishi Electric India, is set to introduce its flagship cutting edge Power Semiconductor Devices and technology to the Indian market. MEI Participation in PCIM Asia New Delhi 2025 reinforces the company’s commitment on delivering high-efficiency semiconductor solutions to support India’s growing demand in the area of Home appliances, Railway, xEV, renewable energy and industrial Applications.
Visitors at PCIM India 2025 will experience the new DIPIPM platform that integrates inverter circuitry, gate-drive functions and protection features into a single module. These modules enable compact designs and improved system safety. Available in both IGBT and SiC-based versions, the latest Compact DIPIPM and SLIMDIP families are suited for applications such as room air conditioners, washing machines, commercial HVAC, solar pumping and light industrial drives.
Mitsubishi Electric India will also showcase a wider product portfolio, including high-voltage HVIGBT modules, LV100 and NX industrial power modules, and automotive-grade semiconductor platforms engineered for Utility-scale solar inverters, wind converters, EV charging & powertrains, Railway traction converters, HVDC transmission and induction heating. Alongside the Power Modules, Mitsubishi Electric India will also display its latest bare-die SiC MOSFETs and RC-IGBT technology which enables optimal structure, low loss, and high reliability devices for xEV- traction and charging applications.
| Product Line | Key Features |
| DIPIPM (Dual In-line Package Intelligent Power Module) | *Offers CSTBT & RC-IGBT chip technologies in a wide line-up *Available in 600V and 1200V, 5A–100A *Includes SiC-MOSFET variants and new Compact DIPIPM & SLIMDIP series |
| LV100 & NX Power Modules | *Industry-standard IGBT & SiC modules with 7th/8th gen CSTBT chipset and SLC packaging *Voltage: 1200V/1700V/2000V; Current: 225A–1800A *Includes new 8th gen LV100 & NX models |
| HVIGBT (High-Voltage IGBT) | *Modules for traction and power transmission *Voltage options: 1700V, 3300V, 4500V, 6500V; Current: 400A–2400A *High-voltage SiC up to 3300V/175A–800A *Includes new XB Series |
| Power Modules for Automotive | *Designed with integrated cooling fins and DLB technology *The Line-up of 2 in 1 circuit & 6 in 1 circuit with latest SiC & RC-IGBT chip technologies *Available in 750V/1300V, 350A–800A with on-chip current and temperature sensing *Includes new J3 Series |
Speaking on the participation, Mr. Hitesh Bhardwaj, General Manager/Business Head, Semiconductors & Devices, Mitsubishi Electric India said: “India is entering a decisive phase of Power Electronics across mobility, renewable energy infrastructure. With the introduction of latest Si and SiC semiconductor technologies to the domestic market, we aim to empower Indian manufacturers with smarter, more efficient and more reliable technologies. Our long-term vision is to support the country’s innovation ecosystem and contribute to sustainable growth across industry and society.”
With India’s manufacturing ecosystem evolving toward higher energy efficiency standards and smarter power architectures, Mitsubishi Electric India’s latest offering strengthens access to globally proven semiconductor innovation tailored for future-ready applications.
