Following the introduction of the EiceDRIVER 6ED223xS12T 1200 V Silicon-on-Isolator (SOI) 3-phase gate driver family, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) is now expanding its portfolio with the EiceDRIVER 2ED132xS12x family. The half-bridge configuration of the driver IC family complements the existing 1200 V SOI series, offering customers more options and design flexibility. The increased output current capability extends the applicability of the portfolio to higher system power levels. The devices offer industry-leading negative VS transient immunity, shoot-through protection, undervoltage lockout and fast overcurrent protection. These features reduce the bill of materials and enable a more rugged design with a compact form factor suitable for high power applications such as commercial HVAC systems, heat pumps, servo drives, industrial inverters, pumps and fans up to 10 kW.
These half-bridge driver ICs include four versions in two different packages: The 2ED132xS12M comes in a DSO-16 300 mil package and provides +2.3 A / -4.6 A current capability. While the 2ED132xS12P comes in a DSO-20 300 mil package and supports +2.3 A / -2.3 A current drive capability. The family features best-in-class switching performance in packages with sufficient creepage and clearance distances. These products integrate a low resistance (30 Ω) bootstrap diode, ultra-fast and accurate (± 5 percent tolerance) overcurrent protection (OCP), enable input, fault-out, and programmable fault reset with separate logic (VSS) and output ground (COM) pins. The 2ED132xS12M variant provides additional features of Active Miller Clamp (AMC) and Short Circuit Clamp (SCC).
Infineon’s SOI technology eliminates the parasitic thyristor structure and provides excellent robustness and immunity to negative transient voltages on the VS pin. This results in guaranteed immunity to -VS transients of 100 V during repeated 700-ns pulses. In addition, the devices are RoHS compliant and resistant to electrostatic discharge (ESD) and moisture.
