HomeNewsIndia NewsCool SiC™ 62 mm module opens up new applications for silicon carbide

    Cool SiC™ 62 mm module opens up new applications for silicon carbide

    Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) adds another industry standard package to its CoolSiC™ MOSFET 1200 V module family. The proven 62 mm device has been designed in half-bridge topology and is based on the trench chip technology. It opens up silicon carbide for applications in the medium power range starting at 250 kW – where silicon reaches the limits of power density with IGBT technology. Compared to a 62 mm IGBT module, the list of applications now additionally includes solar, server, energy storage, EV charger, traction, commercial induction cooking and power conversion systems.

    The 62 mm module features Infineon’s CoolSiC MOSFETs, which enable a high current density. Very low switching and conducting losses minimize cooling efforts, whereas operating the device at high switching frequency allows for using smaller magnetic components. By implementing Infineon’s CoolSiC chip technology, it is possible to design smaller inverter designs for the application in terms of size, overall system costs can be reduced.

    With a base plate and screw connections, the housing is characterized by a very robust mechanical design, which is optimized for highest system availability, a minimum of service cost and off-time losses. The outstanding reliability is made possible by high thermal cycling capability and a continuous operating temperature (Tvjop) of 150°C. The symmetrical internal design of the housing allows identical switching conditions for the upper and lower switch. As an option, the thermal performance of the module can be improved even further with pre-applied thermal interface Material (TIM).

    Availability

    The CoolSiC™ MOSFETs 1200 V in the 62 mm package come in variants of 6 mΩ/250 A, 3 mΩ/357 A, and 2 mΩ/500 A respectively. Designed for fast characterization (double pulse/continuous operation), an evaluation board is available for the devices. For ease of use, it offers a flexible adjustment of the gate voltage and gate resistors. At the same time, it can serve as a reference design for driver boards for series production.

    For more information, visit www.infineon.com

    ELE Times Bureau
    ELE Times Bureauhttps://www.eletimes.ai/
    ELE Times provides a comprehensive global coverage of Electronics, Technology and the Market. In addition to providing in depth articles, ELE Times attracts the industry’s largest, qualified and highly engaged audiences, who appreciate our timely, relevant content and popular formats. ELE Times helps you build awareness, drive traffic, communicate your offerings to right audience, generate leads and sell your products better.

    Related News

    Must Read

    What is Fashion Tech? Providing New Product Value and Customer Experiences with Technology

    Courtesy: Murata Electronics What is fashion tech? - diverse technologies...

    Emergency Screaming Detection: How AI Recognizes Human Screams and Saves Lives

    Courtesy: Renesas Detecting human screams for help is important in...

    India’s Electronics Push: Ambition Is Clear. Execution Will Decide the Outcome

    India’s electronics story has entered a decisive phase. The...

    India on the Road to Semicon Self-Reliance with Three More Plants

    India to welcome three more semiconductor plants after PM...

    Upcoming years to Bring Boom for Semiconductors and Electronics

    Union Minister for Electronics and Information Technology Ashwini Vaishnaw...

    R&S Propels 6G Readiness With FR1–FR3 Carrier Demonstration

    Rohde & Schwarz and Qualcomm Technologies, Inc. have reached...

    ROHM and Suchi Semicon Establish a Strategic Semicon Manufacturing Partnership in India

    ROHM and Suchi Semicon have announced the establishment of...

    Keysight to Demonstrate NR-NTN devices Mobility Testing at MWC 2026 in Collaboration with Samsung

    Keysight Technologies, Inc. will demonstrate lab-based validation of new...

    ROHM Strengthens Supply Capability for GaN Power Devices

    Combining TSMC’s Process Technology to Build an End-to-End, In-Group...