HomeTechnologyMicrocontrollersInfineon’s EiceDRIVER 125 V high-side gate driver protects battery-driven applications in the...

    Infineon’s EiceDRIVER 125 V high-side gate driver protects battery-driven applications in the event of a fault

    In battery-powered applications such as motor drives and switched-mode power supplies (SMPS), the power supply architecture often requires that a module can be disconnected from the main supply rail when a fault occurs in that module. To achieve this functionality, it is common to use high-side disconnect switches (e.g. MOSFETs) to prevent a load short circuit from affecting the battery. Infineon Technologies AG has now introduced the EiceDRIVER 1EDL8011, a high-side gate driver designed to protect battery-powered applications such as cordless power tools, robotics, e-bikes, and vacuum cleaners in the event of a fault.

    The device provides fast turn-on and turn-off of high-side N-channel MOSFETs with its high gate current capabilities. It consists of an integrated charge pump with an external capacitor to provide strong start-up. The internal charge pump provides the MOSFET gate voltage when the operating input voltage is low. The gate driver IC manages inrush current and provides fault protection. Undervoltage Lockout (UVLO) protection at input voltage prevents the device from operating under hazardous conditions. The driver is available in a DSO-8 package, making it ideal for space-constrained designs. It includes overcurrent protection (OCP), adjustable current setting threshold, time delay and a safe start-up mechanism with flexible blanking during MOSFET turn-on transitions.

    The 1EDL8011 has a wide operating voltage range of 8 V to 125 V and a high gate sinking current of up to 1 A, allowing for efficient switching. Additionally, the product has an extremely low off-mode quiescent current of 1 µA, helping to minimize power consumption in sleep mode. The device also includes a VDS sense feature that is used to trigger an overcurrent shutdown by monitoring the drain-to-source voltage of the disconnect MOSFET.

    ELE Times Report
    ELE Times Reporthttps://www.eletimes.ai/
    ELE Times provides extensive global coverage of Electronics, Technology and the Market. In addition to providing in-depth articles, ELE Times attracts the industry’s largest, qualified and highly engaged audiences, who appreciate our timely, relevant content and popular formats. ELE Times helps you build experience, drive traffic, communicate your contributions to the right audience, generate leads and market your products favourably.

    Related News

    Must Read

    Rohde & Schwarz, together with Samsung, first to validate 3GPP NR-NTN conformance across RF, RRM and PCT

    Rohde & Schwarz and Samsung are collaborating to bring...

    Microchip introduces edge-enabling LAN866x 10BASE-T1S ethernet for SDVs

    As the automotive industry transitions to zonal architectures for...

    New Vishay Intertechnology Silicon PIN Photodiode for Biomedical Applications

    Vishay Intertechnology, Inc. introduced a new high speed silicon...

    The Invisible Hand: How Smart Technology Reshaped the RF and Microwave Development Track

    The world is not just connected; it is smart,...

    Nuvoton Technology Launches NuMicro M5531 Series Microcontrollers

    Nuvoton Technology announced the launch of NuMicro M5531 series...

    STMicroelectronics empowers data-hungry industrial transformation with unique dual-range motion sensor

    STMicroelectronics has revealed the ISM6HG256X, a tiny three-in-one motion...

    How AI Is Powering the Road to Level 4 Autonomous Driving

    Courtesy: Nvidia When the Society of Automotive Engineers established its...

    Revolutionizing System Design with AI-Powered Real-Time Simulation

    Courtesy: Cadence The rising demand for AI infrastructure is driving...

    Microchip Technology Expands its India Footprint with a New Office Facility in Bengaluru

    Microchip Technology has expanded its India footprint with the...