HomeElectronicsMajor Breakthrough Speeding Development of Semiconductors for Quantum Applications

    Major Breakthrough Speeding Development of Semiconductors for Quantum Applications

    Researchers from North Carolina State University used computational analysis to predict how optical properties of semiconductor material zinc selenide (ZnSe) change when doped with halogen elements, and found the predictions were confirmed by experimental results. Their method could speed the process of identifying and creating materials useful in quantum applications.

    Creating semiconductors with desirable properties means taking advantage of point defects—sites within a material where an atom may be missing, or where there are impurities. By manipulating these sites in the material, often by adding different elements (a process referred to as “doping”), designers can elicit different properties.

    “Defects are unavoidable, even in ‘pure’ materials,” says Doug Irving, University Faculty Scholar and professor of materials science and engineering at NC State. “We want to interface with those spaces via doping to change certain properties of a material. But figuring out which elements to use in doping is time and labour-intensive. If we could use a computer model to predict these outcomes it would allow material engineers to focus on elements with the best potential.”

    In a proof of principle study, Irving and his team used computational analysis to predict the outcome of using halogen elements chlorine and fluorine as ZnSe dopants. They chose these elements because halogen-doped ZnSe has been extensively studied but the underlying defect chemistries are not well established.

    The model analyzed all possible combinations of chlorine and fluorine at defect sites and correctly predicted outcomes such as electronic and optical properties, ionization energy and light emission from the doped ZnSe.

    “By looking at the electronic and optical properties of defects in a known material, we were able to establish that this approach can be used in a predictive way,” Irving says. “So we can use it to search for defects and interactions that might be interesting.”

    In the case of an optical material like ZnSe, changing the way the material absorbs or emits light could allow researchers to use it in quantum applications that could operate at higher temperatures since certain defects wouldn’t be as sensitive to elevated temperatures.

    “Beyond revisiting a semiconductor like ZnSe for potential use in quantum applications, the broader implications of this work are the most exciting parts,” Irving says. “This is a foundational piece that moves us toward larger goals: using predictive technology to efficiently identify defects and the fundamental understanding of these materials that results from using this technology.”

    ELE Times Research Desk
    ELE Times Research Deskhttps://www.eletimes.ai
    ELE Times provides extensive global coverage of Electronics, Technology and the Market. In addition to providing in-depth articles, ELE Times attracts the industry’s largest, qualified and highly engaged audiences, who appreciate our timely, relevant content and popular formats. ELE Times helps you build experience, drive traffic, communicate your contributions to the right audience, generate leads and market your products favourably.

    Related News

    Must Read

    TI’s new power-management solutions enable scalable AI infrastructures

    Texas Instruments (TI) debuted new design resources and power-management...

    ESA awards Rohde & Schwarz for contributions to 30 years European Satellite Navigation

    The event brought together institutional and industrial partners, ESA...

    STMicroelectronics joins FiRa board, strengthening commitment to UWB ecosystem and automotive Digital Key adoption

    STMicroelectronics, a global semiconductor leader serving customers across the...

    STARLight Project chosen as the European consortium to lead in next-gen silicon photonics on 300 mm wafers

    The STARLight project is bringing together a consortium of leading...

    KYOCERA AVX RELEASES NEW KGP SERIES STACKED CAPACITORS

    KYOCERA AVX released the new KGP Series commercial-grade stacked...

    Microchip Unveils First 3 nm PCIe Gen 6 Switch to Power Modern AI Infrastructure

    Switchtec Gen 6 PCIe Fanout Switches deliver extra bandwidth,...

    Nuvoton Launches Arbel NPCM8mnx System-in-Package (SiP) for AI Servers and Datacenter Infrastructure

    Breakthrough BMC Innovation Powers Secure, Scalable, and Open Compute...

    NEPCON ASIA 2025: Showcasing the Future of Smart Electronics Manufacturing

    NEPCON ASIA 2025, taking place from October 28 to...

    Renesas Expands Sensing Portfolio with 3 Magnet-Free IPS ICs & Web-Based Design Tool

    New Simulation & Optimization Platform Enables Custom Coil Designs...

    IEEE IEDM, 2025 Showcases Latest Technologies in Microelectronics, Themed “100 Years of FETs”

    The IEEE International Electron Devices Meeting (IEDM) is considered...