HomeNewsIndia NewsFourth-Generation 600 V E Series Power MOSFET for telecom, power supply app...

Fourth-Generation 600 V E Series Power MOSFET for telecom, power supply app by Vishay

Superjunction Device Provides Industry’s Lowest RDS(ON)*Qg FOM for Telecom, Industrial, and Enterprise Applications

Vishay Intertechnology, Inc. on Jan. 26, 2017, introduced the first device in its fourth generation of 600 V E Series power MOSFETs. Providing high efficiency for telecom, industrial, and enterprise power supply applications, the Vishay Siliconix n-channel SiHP065N60E slashes on-resistance by 30 % compared with previous 600 V E Series MOSFETs while delivering 44 % lower gate charge. This results in the industry’s lowest gate charge times on-resistance, a key figure of merit (FOM) for 600 V MOSFETs used in power conversion applications.

“We are committed to providing our customers with a broad line of MOSFET technologies that support all stages of the power conversion process, from high-voltage inputs to the low-voltage outputs required by the latest electronic systems,” said David Grey, senior director of market development for Vishay. “With the SiHP065N60E and the upcoming fourth-generation 600 V E Series family, we are addressing the need for efficiency and power density improvements in the first stages of the power system architecture — power factor correction and subsequent high-voltage DC/DC converter blocks.”

Built on Vishay’s latest energy-efficient E-Series super-junction technology, the SiHP065N60E features low maximum on-resistance of 0.065 Ω at 10 V and ultra-low gate charge down to 49 nC. The device’s FOM of 2.8 Ω*nC is 25 % lower than the closest competing MOSFET in the same class. For improved switching performance, the SiHP065N60E provides low effective output capacitances Co(er) and Co(tr) of 93 pf and 593 pF, respectively. These values translate into reduced conduction and switching losses to save energy in power factor correction and hard-switched DC/DC converter topologies for telecom, industrial, and enterprise power systems.

Offered in the TO-220AB package, the device released is RoHS-compliant, halogen-free, and designed to withstand overvoltage transients in the avalanche mode with guaranteed limits through 100 % UIS testing.

Samples and production quantities of the SiHP065N60E are available now, with lead times of 10 weeks.

ELE Times Bureau
ELE Times Bureauhttps://www.eletimes.ai/
ELE Times provides a comprehensive global coverage of Electronics, Technology and the Market. In addition to providing in depth articles, ELE Times attracts the industry’s largest, qualified and highly engaged audiences, who appreciate our timely, relevant content and popular formats. ELE Times helps you build awareness, drive traffic, communicate your offerings to right audience, generate leads and sell your products better.

Related News

Must Read

L&T Technology Services Global EI Hackathon Sparks the Next Wave of AI-Native Engineering Solutions

L&T Technology Services, a global leader in Engineering Intelligence...

Keysight Targets the Hidden Cost of UI Test Authoring and Maintenance

Keysight Technologies today announced Keysight Eggplant Find by Description,...

Infineon Launches SECORA ID Key S USB Security Solution

Infineon Technologies AG has launched the SECORA ID Key...

Infineon Receives Additional Prestigious Award for Outstanding Investor Relations Work

DIRK (German Investor Relations Association) awards Infineon first...

STMicroelectronics Unveils World’s First ST54M Secure Mobile Chip With Post-Quantum Cryptography

Advance single-die solution with PQC (post-quantum cryptography) hardware...

Portronics launches VlogMate Neo: Mini Type-C Wireless Microphone with AI Feature

Featuring AI-powered noise reduction, real-time audio transmission, compact lightweight...

Nuvoton Unveils New Cortex-M23 Microcontroller SOC, NSC128L42, for High-Precision Measurement Applications

Nuvoton Technology Corporation announces the launch of the NSC128L42,...

New Battery Breakthrough Leads to ‘Big Leaps’ in Electronic Performance

A breakthrough could lead to huge breakthroughs in battery...