Infineon Technologies has taken a significant leap forward in power semiconductor technology with the expansion of its CoolSIC 1200V and 2000V MOSFET module families, introducing a cutting-edge 62mm industry-standard package. This revolutionary device, employing a half-bridge topology, is built on the advanced M1H silicon carbide (SiC) MOSFET technology.
The M1H technology introduces a broader gate voltage window, significantly enhancing robustness against voltage spikes at the gate caused by driver and layout influences. This improvement is particularly impactful at high switching frequencies, enabling the use of SiC in mid-power applications starting from 250kW.
This range is of utmost relevance where traditional silicon with insulated-gate bipolar transistor (IGBT) technology faces limitations in terms of power density. With this innovative technology, the scope of applications extends beyond that of a standard 62mm IGBT module. The expanded range spans sectors such as solar energy, servers, energy storage, electric vehicle chargers, traction, commercial induction cooking, and various power conversion systems.
The module boasts minimal switching and transmission losses, thereby reducing the need for extensive cooling systems. Paired with high reverse voltage capabilities, these devices align with the requirements of modern system design. The CoolSiC chip technology contributes to the increased efficiency of converters, allowing for a higher nominal power per inverter and reduced overall system costs.
Designed for durability, the device’s packaging features a baseplate and screw connections optimized for maximum system availability, minimal service costs, and reduced downtime losses. It exhibits a high thermal cycling capacity and operates continuously at a temperature of 150°C.
The symmetrical internal design of the package ensures identical switching conditions for both the upper and lower switches, ensuring optimal performance. Moreover, users have the option to further enhance thermal performance by applying a pre-applied thermal interface material (TIM).
Infineon’s introduction of the 62mm CoolSiC Module marks a significant stride toward increased efficiency and reliability in power semiconductor technology. With applications spanning diverse sectors, from renewable energy to electric vehicles, this innovation promises to reshape the landscape of power conversion systems. As industries seek more efficient and cost-effective solutions, Infineon’s cutting-edge technology stands poised to meet these evolving demands, offering a glimpse into the future of power electronics.
